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Q62702-C619 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - NPN Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) - Siemens Semiconductor Group

भाग संख्या Q62702-C619
समारोह NPN Silicon AF Transistors (High current gain Low collector-emitter saturation voltage)
मैन्युफैक्चरर्स Siemens Semiconductor Group 
लोगो Siemens Semiconductor Group लोगो 
पूर्व दर्शन
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Q62702-C619 pdf
BCX 58
BCX 59
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
DC characteristics
Collector-emitter breakdown voltage
IC = 2 mA
BCX 58
BCX 59
Collector-base breakdown voltage
IC = 10 µA
BCX 58
BCX 59
Emitter-base breakdown voltage
IE = 1 µA
Collector cutoff current
VCB = 32 V
VCB = 45 V
VCB = 32 V, TA = 150 ˚C
VCB = 45 V, TA = 150 ˚C
BCX 58
BCX 59
BCX 58
BCX 59
Collector cutoff current
VCE = 32 V, VBE = 0.2 V,TA = 100 ˚C
VCE = 45 V, VBE = 0.2 V,TA = 100 ˚C
Emitter cutoff current
VEB = 4 V
DC current gain
IC = 10 µA, VCE = 5 V
BCX 58 VII, BCX 59 VII
BCX 58 VIII, BCX 59 VIII
BCX 58 IX, BCX 59 IX
BCX 58 X, BCX 59 X
IC = 2 mA, VCE = 5 V
BCX 58 VII, BCX 59 VII
BCX 58 VIII, BCX 59 VIII
BCX 58 IX, BCX 59 IX
BCX 58 X, BCX 59 X
IC = 100 mA, VCE = 1 V1)
BCX 58 VII, BCX 59 VII
BCX 58 VIII, BCX 59 VIII
BCX 58 IX, BCX 59 IX
BCX 58 X, BCX 59 X
Symbol
Values
Unit
min. typ. max.
V(BR)CE0
V
32 –
45 –
V(BR)CB0
32
45
V(BR)EB0 7 – –
ICB0
– – 20 nA
– – 20 nA
– – 10 µA
– – 10 µA
ICEX
µA
– – 20
– – 20
IEB0 – – 20 nA
hFE
20 78 –
20 145 –
40 220 –
100 300 –
120 170 220
180 250 310
250 350 460
380 500 630
40 –
45 –
60 –
60 –
1) Pulse test: t 300 µs, D 2 %.
Semiconductor Group
2

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भाग संख्याविवरणविनिर्माण
Q62702-C619NPN Silicon AF Transistors (High current gain Low collector-emitter saturation voltage)Siemens Semiconductor Group
Siemens Semiconductor Group


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