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TEMT4700 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon NPN Phototransistor - Vishay Telefunken

भाग संख्या TEMT4700
समारोह Silicon NPN Phototransistor
मैन्युफैक्चरर्स Vishay Telefunken 
लोगो Vishay Telefunken लोगो 
पूर्व दर्शन
1 Page
		
<?=TEMT4700?> डेटा पत्रक पीडीएफ

TEMT4700 pdf
TEMT4700
Vishay Telefunken
Basic Characteristics
Tamb = 25_C
Parameter
Test Conditions
Collector Emitter Breakdown IC = 1 mA
Voltage
Collector Dark Current
Collector Emitter Capacitance
Collector Light Current
Angle of Half Sensitivity
VCE = 20 V, E = 0
VCE = 5 V, f = 1 MHz, E=0
lEe = 1 mW/cm2,
= 950 nm, VCE = 5 V
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Collector Emitter Saturation
Voltage
Rise Time / Fall Time
Cut–Off Frequency
lEe = 1 mW/cm2,
= 950 nm, IC = 0.1 mA
l WVS = 5 V, IC = 1 mA,
= 950 nm, RL = 1 k
l WVS = 5 V, IC = 1 mA,
= 950 nm, RL = 100
WVS = 5 V, IC = 2 mA,
RL = 100
Symbol Min
Typ Max
V(BR)CE 70
O
ICEO
1 200
CCEO
3
Ica 0.25
0.5
ϕ
ll0p.5
VCEsat
±60
830
620...980
0.15
0.3
tr / tf
6
tr / tf
2
fc 180
Unit
V
nA
pF
mA
deg
nm
nm
V
ms
ms
kHz
Typical Characteristics (Tamb = 25_C unless otherwise specified)
125 104
100
103
75 VCE=20V
RthJA
102
50
101
25
0
0
94 8308
20 40 60 80 100
Tamb – Ambient Temperature ( °C )
Figure 1. Total Power Dissipation vs.
Ambient Temperature
100
20
94 8304
40 60 80 100
Tamb – Ambient Temperature ( °C )
Figure 2. Collector Dark Current vs. Ambient Temperature
www.vishay.de FaxBack +1-408-970-5600
2 (5)
Document Number 81556
Rev. 2, 20-May-99

विन्यास 5 पेज
डाउनलोड[ TEMT4700 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
TEMT4700Silicon NPN PhototransistorVishay Telefunken
Vishay Telefunken


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