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TIPP32B डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - PNP SILICON POWER TRANSISTORS - Power Innovations Limited

भाग संख्या TIPP32B
समारोह PNP SILICON POWER TRANSISTORS
मैन्युफैक्चरर्स Power Innovations Limited 
लोगो Power Innovations Limited लोगो 
पूर्व दर्शन
1 Page
		
<?=TIPP32B?> डेटा पत्रक पीडीएफ

TIPP32B pdf
TIPP32, TIPP32A,TIPP32B, TIPP32C
PNP SILICON POWER TRANSISTORS
MAY 1989 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN TYP MAX
Collector-emitter
V(BR)CEO breakdown voltage
ICES
Collector-emitter
cut-off current
ICEO
IEBO
hFE
VCE(sat)
VBE
hfe
|hfe|
Collector cut-off
current
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
IC = -5 mA
(see Note 4)
VCE = -40 V
VCE = -60 V
VCE = -80 V
VCE = -100 V
VCE = -30 V
VCE = -60 V
VEB = -5 V
VCE = -4 V
VCE = -4 V
IB = -375 mA
VCE = -4 V
VCE = -10 V
VCE = -10 V
IB = 0
VBE = 0
VBE = 0
VBE = 0
VBE = 0
IB = 0
IB = 0
IC = 0
IC = -1 A
IC = -2 A
IC = -2 A
IC = -2 A
IC = -0.5 A
IC = -0.5 A
TIPP32
TIPP32A
TIPP32B
TIPP32C
TIPP32
TIPP32A
TIPP32B
TIPP32C
TIPP32/32A
TIPP32B/32C
-40
-60
-80
-100
(see Notes 4 and 5)
(see Notes 4 and 5)
(see Notes 4 and 5)
f = 1 kHz
f = 1 MHz
20
10
20
3
-0.2
-0.2
-0.2
-0.2
-0.3
-0.3
-1
-1
-1.5
NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle 2%.
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
mA
mA
mA
V
V
PRODUCT INFORMATION
2

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भाग संख्याविवरणविनिर्माण
TIPP32PNP SILICON POWER TRANSISTORSPower Innovations Limited
Power Innovations Limited
TIPP32APNP SILICON POWER TRANSISTORSPower Innovations Limited
Power Innovations Limited


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