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TIPP110 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - NPN SILICON POWER DARLINGTONS - Power Innovations Limited

भाग संख्या TIPP110
समारोह NPN SILICON POWER DARLINGTONS
मैन्युफैक्चरर्स Power Innovations Limited 
लोगो Power Innovations Limited लोगो 
पूर्व दर्शन
1 Page
		
<?=TIPP110?> डेटा पत्रक पीडीएफ

TIPP110 pdf
TIPP110, TIPP111, TIPP112
NPN SILICON POWER DARLINGTONS
MAY 1989 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN TYP MAX UNIT
Collector-emitter
V(BR)CEO breakdown voltage
ICEO
Collector-emitter
cut-off current
ICBO
Collector-base
cut-off current
IEBO
hFE
VCE(sat)
VBE
VEC
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Parallel diode
forward voltage
IC = 10 mA
(see Note 4)
VCE = 30 V
VCE = 40 V
VCE = 50 V
VCE = 60 V
VCE = 80 V
VCE = 100 V
VEB = 5 V
VCE = 4 V
VCE = 4 V
IB = 8 mA
VCE = 4 V
IE = 4 A
IB = 0
VBE = 0
VBE = 0
VBE = 0
IB = 0
IB = 0
IB = 0
IC = 0
IC = 1 A
IC = 2 A
IC = 2 A
IC = 2 A
IB = 0
TIPP110
TIPP111
TIPP112
TIPP110
TIPP111
TIPP112
TIPP110
TIPP111
TIPP112
60
80
100
(see Notes 4 and 5)
(see Notes 4 and 5)
1000
500
(see Notes 4 and 5)
(see Notes 4 and 5)
V
2
2 mA
2
1
1 mA
1
2 mA
2.5 V
2.8 V
3.5 V
NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle 2%.
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts and located
within 3.2 mm from device body.
PRODUCT INFORMATION
2

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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
TIPP110NPN SILICON POWER DARLINGTONSPower Innovations Limited
Power Innovations Limited
TIPP111NPN SILICON POWER DARLINGTONSPower Innovations Limited
Power Innovations Limited


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