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U2FWJ44N डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - HIGH SPEED RECTIFIER APPLICATIONS - Toshiba Semiconductor

भाग संख्या U2FWJ44N
समारोह HIGH SPEED RECTIFIER APPLICATIONS
मैन्युफैक्चरर्स Toshiba Semiconductor 
लोगो Toshiba Semiconductor लोगो 
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U2FWJ44N pdf
U2FWJ44N
Handling Precaution
Schottky barrier diodes have reverse current characteristic compared to the other diodes.
There is a possibility SBD may cause thermal runaway when it is used under high temperature or high voltage.
This device is VF-IRRM trade-off type, lower VF higher IRRM; therefore, thermal runaway might occur when
voltage is applied. Please take forward and reverse loss into consideration during design.
The maximum ratings denote the absolute maximum ratings, which are rated values and must not be exceeded
during operation, even for an instant. The following are the general derating methods that we recommend when
you design a circuit with a device.
VRRM: Use this rating with reference to the above. VRRM has a temperature coefficient of 0.1%/°C. Take
this temperature coefficient into account designing a device at low temperature.
IF(AV):
We recommend that the worst case current be no greater than 80% of the maximum rating of IF(AV)
and Tj be below 100°C. When using this device, take the margin into consideration by using an
allowable Tamax-IF(AV) curve.
IFSM: This rating specifies the non-repetitive peak current. This is only applied for an abnormal operation,
which seldom occurs during the lifespan of the device.
Tj: Derate this rating when using a device in order to ensure high reliability. We recommend that the
device be used at a Tj of below 100°C.
Thermal resistance between junction and ambient fluctuates depending on the device’s mounting condition. When
using a device, please design a circuit board and a soldering land size to match the appropriate thermal resistance
value.
Please refer to the Rectifiers databook for further information.
2 2004-07-01

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