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ZC829 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - SILICON 28V HYPERABRUPT VARACTOR DIODES - Zetex Semiconductors

भाग संख्या ZC829
समारोह SILICON 28V HYPERABRUPT VARACTOR DIODES
मैन्युफैक्चरर्स Zetex Semiconductors 
लोगो Zetex Semiconductors लोगो 
पूर्व दर्शन
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<?=ZC829?> डेटा पत्रक पीडीएफ

ZC829 pdf
830 series
TUNING CHARACTERISTICS at Tamb = 25°C
PART
Capacitance (pF)
VR=2V, f=1MHz
829A
829B
830A
830B
831A
831B
832A
832B
833A
833B
834A
834B
835A
835B
836A
836B
MIN.
7.38
7.79
9.0
9.5
13.5
14.25
19.8
20.9
29.7
31.35
42.3
44.65
61.2
64.6
90.0
95.0
NOM.
8.2
8.2
10.0
10.0
15.0
15.0
22.0
22.0
33.0
33.0
47.0
47.0
68.0
68.0
100.0
100.0
MAX.
9.02
8.61
11.0
10.5
16.5
15.75
24.2
23.1
36.3
34.65
51.7
49.35
74.8
71.4
110.0
105.0
Min Q
VR=3V
f=50MHz
250
250
300
300
300
300
200
200
200
200
200
200
100
100
100
100
Capacitance Ratio
C2 / C20
at f=1MHz
MIN.
MAX.
4.3 5.8
4.3 5.8
4.5 6.0
4.5 6.0
4.5 6.0
4.5 6.0
5.0 6.5
5.0 6.5
5.0 6.5
5.0 6.5
5.0 6.5
5.0 6.5
5.0 6.5
5.0 6.5
5.0 6.5
5.0 6.5
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Forward current
Power dissipation at Tamb = 25ЊC SOT23
Power dissipation at Tamb = 25ЊC SOD323
Power dissipation at Tamb = 25ЊC SOD523
Operating and storage temperature range
SYMBOL
IF
Ptot
Ptot
Ptot
MAX
200
330
330
250
-55 to +150
UNIT
mA
mW
mW
mW
ЊC
ELECTRICAL CHARACTERISTICS at Tamb = 25°C
PARAMETER
Reverse breakdown voltage
Reverse voltage leakage
Temperature coefficient of capacitance
CONDITIONS
IR = 10uA
VR = 20V
VR = 3V, f = 1MHz
MIN.
25
TYP.
0.2
300
MAX.
20
400
UNIT
V
nA
ppCm/ЊC
ISSUE 6 - JANUARY 2002
2

विन्यास 6 पेज
डाउनलोड[ ZC829 Datasheet.PDF ]


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