Z01 डेटा पत्रक PDF( Datasheet डाउनलोड )

		



Characteristics
1 Characteristics
Z01
Table 1.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
IT(RMS)
ITSM
I²t
dI/dt
IGM
PG(AV)
Tstg
Tj
On-state rms current
(full sine wave)
SOT-223
TO-92
SMBflat-3L
Non repetitive surge peak on-state F = 50 Hz
current (full cycle, Tj initial = 25 °C) F = 60 Hz
I²t Value for fusing
tp = 10 ms
Critical rate of rise of on-state current
IG = 2 x IGT , tr ≤ 100 ns
F = 120 Hz
Peak gate current
tp = 20 µs
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
Ttab = 90 °C
TL = 50 °C
Ttab = 107 °C
t = 20 ms
t = 16.7 ms
1
8
8.5
0.35
Tj = 125 °C
20
Tj = 125 °C
Tj = 125 °C
1
1
- 40 to + 150
- 40 to + 125
A
A
A²s
A/µs
A
W
°C
Table 2. Electrical characteristics (Tj = 25 °C, unless otherwise specified)
Symbol Test conditions Quadrant
Z01
03 07 09 10
Unit
IGT (1)
VGT
VGD
IH (2)
VD = 12 V,
RL = 30 Ω
VD = VDRM,
RL = 3.3 kΩ,
Tj = 125 °C
IT = 50 mA
IL IG = 1.2 IGT
I - II - III
IV
ALL
MAX.
MAX.
3
5
5 10
7 10
1.3
25
mA
25
V
ALL MIN. 0.2 V
MAX. 7 10 10 25 mA
I - III - IV
7 10 15 25
MAX.
mA
II 15 20 25 50
dV/dt (2)
VD = 67% VDRM gate open
Tj = 110 °C
MIN.
(dV/dt)c (dI/dt)c = 0.44 A/ms,
(2) Tj = 110 °C
MIN.
1. Minimum IGT is guaranteed at 5% of IGT max.
2. For both polarities of A2 referenced to A1.
10 20
0.5 1
50 100 V/µs
2 5 V/µs
2/12 Doc ID 7474 Rev 10