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XN04602 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon NPN epitaxial planar type - Panasonic Semiconductor

भाग संख्या XN04602
समारोह Silicon NPN epitaxial planar type
मैन्युफैक्चरर्स Panasonic Semiconductor 
लोगो Panasonic Semiconductor लोगो 
पूर्व दर्शन
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<?=XN04602?> डेटा पत्रक पीडीएफ

XN04602 pdf
XN04602
Electrical Characteristics Ta = 25°C ± 3°C
Tr1
Parameter
Symbol
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (Base open) VCEO
Emitter-base voltage (Collector open) VEBO
Collector-base cutoff current (Emitter open) ICBO
Forward current transfer ratio *
hFE1
hFE2
Collector-emitter saturation voltage * VCE(sat)
Transition frequency
fT
Collector output capacitance
(Common base, input open circuited)
Cob
Conditions
IC = 10 µA, IE = 0
IC = 10 mA, IB = 0
IE = 10 µA, IC = 0
VCB = 20 V, IE = 0
VCE = 10 V, IC = 150 mA
VCE = 10 V, IC = 500 mA
IC = 300 mA, IB = 30 mA
VCB = 10 V, IE = −50 mA, f = 200 MHz
VCB = 10 V, IE = 0, f = 1 MHz
Min
60
50
5
85
40
Typ Max
0.1
340
0.35 0.60
200
6 15
Unit
V
V
V
µA
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Pulse measurement
Tr2
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Symbol
VCBO
VCEO
VEBO
ICBO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
Cob
Conditions
IC = −10 µA, IE = 0
IC = −10 mA, IB = 0
IE = −10 µA, IC = 0
VCB = −20 V, IE = 0
VCE = −10 V, IC = −150 mA
VCE = −10 V, IC = −500 mA
IC = −300 mA, IB = −30 mA
IC = −300 mA, IB = −30 mA
VCB = −10 V, IE = 50 mA, f = 200 MHz
VCB = −10 V, IE = 0, f = 1 MHz
Min
60
50
5
85
40
Typ Max
0.1
340
0.35 0.60
1.1 1.5
200
6 15
Unit
V
V
V
µA
V
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Pulse measurement
Common characteristics chart
PT Ta
500
400
300
200
100
0
0 40 80 120 160
Ambient temperature Ta (°C)
2 SJJ00261BED

विन्यास 5 पेज
डाउनलोड[ XN04602 Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
XN04602Silicon NPN epitaxial planar typePanasonic Semiconductor
Panasonic Semiconductor


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