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IRF7807D1 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - MOSFET / SCHOTTKY DIODE - International Rectifier

भाग संख्या IRF7807D1
समारोह MOSFET / SCHOTTKY DIODE
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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IRF7807D1 pdf
IRF7807D1
Electrical Characteristics
Parameter
Drain-to-Source
Breakdown Voltage*
V(BR)DSS
Static Drain-Source
on Resistance*
RDS(on)
Gate Threshold Voltage* VGS(th)
Drain-Source Leakage IDSS
Current*
Gate-Source Leakage
Current*
Total Gate Charge
Synch FET*
Total Gate Charge
Control FET*
Pre-Vth
Gate-Source Charge
Post-Vth
Gate-Source Charge
Gate to Drain Charge
Switch Charge*
(Qgs2 + Qgd)
Output Charge*
Gate Resistance
IGSS
Qgsync
Qgcont
Qgs1
Qgs2
Qgd
QSW
Qoss
Rg
Min Typ Max Units
Conditions
30 V VGS = 0V, ID = 250µA
17 25 mVGS = 4.5V, ID = 7A‚
1.0 V VDS = VGS,ID = 250µA
90 µA VDS = 24V, VGS = 0V
7.2 mA VDS = 24V, VGS = 0V,
Tj = 125°C
+/- 100 nA VGS = +/-12V
10.5 14
12 17
2.1
VDS<100mV,
VGS = 5V, ID = 7A
VDS= 16V,
VGS = 5V, ID = 7A
VDS = 16V, ID = 7A
0.76 nC
2.9
3.66 5.2
15.3 18.4
VDS = 16V, VGS = 0
1.2
Schottky Diode & Body Diode Ratings and Characteristics
Parameter
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
Conditions
V
SD
0.5
V
T
j
=
25°C,
I
s
=
1A,
V
GS
=0V‚
0.39
Tj = 125°C, Is = 1A, VGS =0V‚
trr 51 ns Tj = 25°C, Is = 7.0A, VDS = 16V
Qrr 48 nC di/dt = 100A/µs
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Pulse width 300 µs; duty cycle 2%.
ƒ When mounted on 1 inch square copper board, t < 10 sec.
„ 50% Duty Cycle, Rectangular
* Devices are 100% tested to these parameters.
2
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