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J111 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-channel silicon field-effect transistors - NXP

भाग संख्या J111
समारोह N-channel silicon field-effect transistors
मैन्युफैक्चरर्स NXP 
लोगो NXP लोगो 
पूर्व दर्शन
1 Page
		
<?=J111?> डेटा पत्रक पीडीएफ

J111 pdf
Philips Semiconductors
N-channel silicon field-effect transistors
Product specification
J111; J112; J113
DESCRIPTION
Symmetrical silicon n-channel
junction FETs in plastic TO-92
envelopes. They are intended for
applications such as analog switches,
choppers, commutators etc.
FEATURES
High speed switching
Interchangeability of drain and
source connections
Low RDS on at zero gate voltage
PINNING
1 = gate
2 = source
3 = drain
Note: Drain and source are
interchangeable.
handbook, half1pa2ge
3
g
MAM042
d
s
Fig.1 Simplified outline and symbol, TO-92.
QUICK REFERENCE DATA
Drain-source voltage
Drain current
VDS = 15 V; VGS = 0
Total power dissipation
up to Tamb = 50 °C
Gate-source cut-off voltage
VDS = 5 V; ID = 1 µA
Drain-source on-state resistance
VDS = 0.1 V; VGS = 0
±VDS
max.
IDSS
min.
Ptot
VGS off
max.
min.
max.
RDS on
max.
J111
40
J112
40
J113
40 V
20 5 2 mA
400 400
31
10 5
400 mW
0.5 V
3V
30 50 100
July 1993
2

विन्यास 6 पेज
डाउनलोड[ J111 Datasheet.PDF ]


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