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7413 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET(Vdss=30V/ Id=12A) - International Rectifier

भाग संख्या 7413
समारोह Power MOSFET(Vdss=30V/ Id=12A)
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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<?=7413?> डेटा पत्रक पीडीएफ

7413 pdf
IRF7413
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
IDSS
Gate Threshold Voltage
Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
30
–––
–––
–––
1.0
–––
–––
–––
–––
Typ.
–––
0.03
–––
–––
–––
–––
–––
–––
–––
Max.
–––
–––
11
18
–––
1.0
25
100
-100
Units
V
V/°C
m
V
µA
nA
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 7.2A ƒ
VGS = 4.5V, ID = 6.0A
VDS = VGS, ID = 250µA
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs Forward Transconductance
16 ––– ––– S VDS = 10V, ID = 7.2A
Qg Total Gate Charge
Qgs Gate-to-Source Charge
––– 44 66
ID = 7.2A
––– 7.9 ––– nC VDS = 24V
Qgd
td(on)
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
––– 9.2 –––
––– 8.8 –––
VGS = 10V,
VDD = 100V
tr
td(off)
tf
Ciss
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
––– 8.0 ––– ns ID = 7.2A
––– 35 –––
RG = 6.2
––– 14 –––
VGS = 10V ƒ
––– 1670 –––
VGS = 0V
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
––– 670 –––
VDS = 25V
––– 100 ––– pF ƒ = 1.0MHz
Coss
Coss
Coss eff.
Output Capacitance
Output Capacitance
Effective Output Capacitance
––– 2290 –––
––– 680 –––
––– 1020 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 24V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 24V …
Avalanche Characteristics
Parameter
EAS Single Pulse Avalanche Energy‚
IAR Avalanche Current
Typ.
–––
–––
Max.
120
7.2
Units
mJ
A
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
2
Min.
–––
–––
–––
–––
–––
Typ. Max.
––– 3.1
––– 96
––– 1.0
50 75
74 110
Units
A
V
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = 7.2A, VGS = 0V ƒ
TJ = 25°C, IF = 7.2A
di/dt = 100A/µs ƒ
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