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FQI1N60 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 600V N-Channel MOSFET - Fairchild Semiconductor

भाग संख्या FQI1N60
समारोह 600V N-Channel MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FQI1N60?> डेटा पत्रक पीडीएफ

FQI1N60 pdf
Electrical CharacteristicsTC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
600
--
--
--
--
--
--
0.4
--
--
--
--
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250µ A
VGS = 10 V, ID = 0.6 A
VDS = 50 V, ID = 0.6 A (Note 4)
3.0
--
--
--
9.3
0.9
Dynamic Characteristics
Ciss
Coss
Input Capacitance
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 120
-- 20
-- 3
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 300 V, ID = 1.2 A,
RG = 25
(Note 4, 5)
VDS = 480 V, ID = 1.2 A,
VGS = 10 V
(Note 4, 5)
--
--
--
--
--
--
--
5
25
7
25
5
1
2.6
--
--
10
100
100
-100
5.0
11.5
--
150
25
4
20
60
25
60
6
--
--
V
V/°C
µA
µA
nA
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
-- -- 1.2
ISM Maximum Pulsed Drain-Source Diode Forward Current
-- -- 4.8
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 1.2 A
-- -- 1.4
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 1.2 A,
-- 160
dIF / dt = 100 A/µs
(Note 4)
--
0.3
--
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 64mH, IAS = 1.2A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD  1.2A, di/dt  200A/µs, VDD  BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width  300µs, Duty cycle  2%
5. Essentially independent of operating temperature
A
A
V
ns
µC
©2000 Fairchild Semiconductor International
Rev. A, April 2000

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