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FQI17P06 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 60V P-Channel MOSFET - Fairchild Semiconductor

भाग संख्या FQI17P06
समारोह 60V P-Channel MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=FQI17P06?> डेटा पत्रक पीडीएफ

FQI17P06 pdf
Elerical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = -250 µA
-60 --
ID = -250 µA, Referenced to 25°C -- -0.06
--
--
IDSS
Zero Gate Voltage Drain Current
VDS = -60 V, VGS = 0 V
VDS = -48 V, TC = 150°C
-- --
-1
-- -- -10
IGSSF
IGSSR
Gate-Body Leakage Current, Forward VGS = -25 V, VDS = 0 V
Gate-Body Leakage Current, Reverse VGS = 25 V, VDS = 0 V
-- -- -100
-- -- 100
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = -250 µA
VGS = -10 V, ID = -8.5 A
VDS = -30 V, ID = -8.5 A (Note 4)
-2.0 --
-- 0.094
-- 9.3
-4.0
0.12
--
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
-- 690 900
-- 325 420
-- 80 105
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = -30 V, ID = -8.5 A,
RG = 25
-- 13 35
-- 100 210
-- 22 55
(Note 4, 5)
--
60 130
VDS = -48 V, ID = -17 A,
-- 21 27
VGS = -10 V
-- 4.2
--
(Note 4, 5)
--
10
--
V
V/°C
µA
µA
nA
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
-- -- -17
ISM Maximum Pulsed Drain-Source Diode Forward Current
-- -- -68
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -17 A
-- -- -4.0
trr Reverse Recovery Time
VGS = 0 V, IS = -17 A,
-- 92
--
Qrr Reverse Recovery Charge
dIF / dt = 100 A/µs
(Note 4) -- 0.32
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 1.2mH, IAS = -17A, VDD = -25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD -17A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
A
A
V
ns
µC
©2001 Fairchild Semiconductor Corporation
Rev. A2. May 2001

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डाउनलोड[ FQI17P06 Datasheet.PDF ]


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