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FQI13N10L डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 100V LOGIC N-Channel MOSFET - Fairchild Semiconductor

भाग संख्या FQI13N10L
समारोह 100V LOGIC N-Channel MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FQI13N10L?> डेटा पत्रक पीडीएफ

FQI13N10L pdf
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 250 µA
100 --
ID = 250 µA, Referenced to 25°C -- 0.09
IDSS
Zero Gate Voltage Drain Current
VDS = 100 V, VGS = 0 V
VDS = 80 V, TC = 150°C
-- --
-- --
IGSSF
IGSSR
Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V
Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V
-- --
-- --
--
--
1
10
100
-100
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on) Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 6.4 A
VGS = 5 V, ID = 6.4 A
VDS = 30 V, ID = 6.4 A
(Note 4)
1.0 --
--
0.142
0.158
-- 9.5
2.0
0.18
0.2
--
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 400 520
-- 95 125
-- 20
25
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 50 V, ID = 12.8 A,
RG = 25
-- 7.5
25
-- 220 450
-- 22
55
(Note 4, 5)
-- 72 150
VDS = 80 V, ID = 12.8 A,
VGS = 5 V
(Note 4, 5)
--
--
--
8.7
2.0
5.3
12
--
--
V
V/°C
µA
µA
nA
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
-- -- 12.8
ISM Maximum Pulsed Drain-Source Diode Forward Current
-- -- 51.2
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 12.8 A
-- -- 1.5
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 12.8 A,
-- 75
dIF / dt = 100 A/µs
(Note 4) -- 0.17
--
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 0.87mH, IAS = 12.8A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 12.8A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
A
A
V
ns
µC
©2000 Fairchild Semiconductor International
Rev. A4, December 2000

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