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FQI13N06L डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 60V LOGIC N-Channel MOSFET - Fairchild Semiconductor

भाग संख्या FQI13N06L
समारोह 60V LOGIC N-Channel MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FQI13N06L?> डेटा पत्रक पीडीएफ

FQI13N06L pdf
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 250 µA
60 --
ID = 250 µA, Referenced to 25°C -- 0.05
--
--
IDSS
Zero Gate Voltage Drain Current
VDS = 60 V, VGS = 0 V
VDS = 48 V, TC = 150°C
-- --
-- --
1
10
IGSSF
IGSSR
Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V
Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V
-- -- 100
-- -- -100
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on) Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 6.8 A
VGS = 5 V, ID = 6.8 A
VDS = 25 V, ID = 6.8 A
(Note 4)
1.0 --
2.5
-- 0.088 0.11
-- 0.110 0.14
-- 7
--
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 270 350
-- 95 125
-- 17
23
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 30 V, ID = 6.8 A,
RG = 25
-- 8
25
-- 90 190
-- 20
50
(Note 4, 5)
--
40
90
VDS = 48 V, ID = 13.6 A,
-- 4.8 6.4
VGS = 5 V
-- 1.6
--
(Note 4, 5) -- 2.7
--
V
V/°C
µA
µA
nA
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 13.6 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 13.6 A,
dIF / dt = 100 A/µs
(Note 4)
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 570µH, IAS = 13.6A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 13.6A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
--
--
--
--
--
-- 13.6
-- 54.4
-- 1.5
45 --
45 --
A
A
V
ns
nC
©2001 Fairchild Semiconductor Corporation
Rev. A1. May 2001

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डाउनलोड[ FQI13N06L Datasheet.PDF ]


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