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FQI12P10 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 100V P-Channel MOSFET - Fairchild Semiconductor

भाग संख्या FQI12P10
समारोह 100V P-Channel MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FQI12P10?> डेटा पत्रक पीडीएफ

FQI12P10 pdf
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = -250 µA
ID = -250 µA, Referenced to 25°C
VDS = -100 V, VGS = 0 V
VDS = -80 V, TC = 150°C
VGS = -30 V, VDS = 0 V
VGS = 30 V, VDS = 0 V
-100
--
--
--
--
--
--
-0.1
--
--
--
--
--
--
-1
-10
-100
100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = -250 µA
-2.0 --
-4.0
VGS = -10 V, ID = -5.75 A
-- 0.24 0.29
VDS = -40 V, ID = -5.75 A (Note 4)
--
6.7
--
V
S
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
-- 620 800 pF
-- 220 290 pF
-- 65 85 pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = -50 V, ID = -11.5 A,
RG = 25
(Note 4, 5)
VDS = -80 V, ID = -11.5 A,
VGS = -10 V
(Note 4, 5)
--
--
--
--
--
--
--
15 40
160 330
35 80
60 130
21 27
4.6 --
11.5 --
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
-- -- -11.5 A
ISM Maximum Pulsed Drain-Source Diode Forward Current
-- -- -46 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -11.5 A
-- -- -4.0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = -11.5 A,
-- 110
dIF / dt = 100 A/µs
(Note 4) -- 0.47
--
--
ns
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 4.2mH, IAS = -11.5A, VDD = -25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD " -11.5A, di/dt " 300A/µs, VDD " BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width " 300µs, Duty cycle " 2%
5. Essentially independent of operating temperature
©2002 Fairchild Semiconductor Corporation
Rev. B, August 2002

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डाउनलोड[ FQI12P10 Datasheet.PDF ]


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