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FQI12N50 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 500V N-Channel MOSFET - Fairchild Semiconductor

भाग संख्या FQI12N50
समारोह 500V N-Channel MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FQI12N50?> डेटा पत्रक पीडीएफ

FQI12N50 pdf
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 250 µA
500 --
ID = 250 µA, Referenced to 25°C -- 0.48
IDSS
Zero Gate Voltage Drain Current
VDS = 500 V, VGS = 0 V
VDS = 400 V, TC = 125°C
-- --
-- --
IGSSF
IGSSR
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
-- --
-- --
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 6.05 A
VDS = 50 V, ID = 6.05 A
(Note 4)
3.0
--
--
--
0.39
9.8
5.0
0.49
--
V
S
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 1550 2020
-- 220 285
-- 25
33
pF
pF
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 250 V, ID = 12.1 A,
RG = 25
(Note 4,5)
VDS = 400 V, ID = 12.1 A,
VGS = 10 V
(Note 4,5)
-- 35
80
-- 120 250
-- 70 150
-- 80 170
-- 39
51
-- 9.3
--
-- 17.4 --
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 12.1 A
trr Reverse Recovery Time
VGS = 0 V, IS = 12.1 A,
Qrr Reverse Recovery Charge
dIF / dt = 100 A/µs
(Note 4)
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 10.8mH, IAS = 12.1A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 12.1A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
--
--
--
--
--
-- 12.1
-- 48.4
-- 1.4
300 --
2.6 --
A
A
V
ns
µC
©2002 Fairchild Semiconductor Corporation
Rev. A, May 2002

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डाउनलोड[ FQI12N50 Datasheet.PDF ]


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