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FQI12N20L डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 200V LOGIC N-Channel MOSFET - Fairchild Semiconductor

भाग संख्या FQI12N20L
समारोह 200V LOGIC N-Channel MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FQI12N20L?> डेटा पत्रक पीडीएफ

FQI12N20L pdf
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 250 µA
200 --
ID = 250 µA, Referenced to 25°C -- 0.14
IDSS
Zero Gate Voltage Drain Current
VDS = 200 V, VGS = 0 V
VDS = 160 V, TC = 125°C
-- --
-- --
IGSSF
IGSSR
Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V
Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V
-- --
-- --
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on) Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
1.0 --
2.0
VGS = 10 V, ID = 5.8 A
VGS = 5 V, ID = 5.8 A
--
0.22 0.28
0.25 0.32
VDS = 30 V, ID = 5.8 A (Note 4) -- 12.7
--
V
S
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 830 1080 pF
-- 120 155
pF
-- 17 22 pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 100 V, ID = 11.6 A,
RG = 25
-- 15
40
-- 190 390
-- 60 130
(Note 4, 5)
-- 120 250
VDS = 160 V, ID = 11.6 A,
VGS = 5 V
(Note 4, 5)
--
--
--
16
2.8
7.6
21
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
-- -- 11.6
ISM Maximum Pulsed Drain-Source Diode Forward Current
-- -- 46.4
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 11.6 A
-- -- 1.5
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 11.6 A,
-- 128
dIF / dt = 100 A/µs
(Note 4) -- 0.56
--
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 2.3mH, IAS = 11.6A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 11.6A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
A
A
V
ns
µC
©2001 Fairchild Semiconductor Corporation
Rev. A1, February 2001

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FQI12N20L200V LOGIC N-Channel MOSFETFairchild Semiconductor
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