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FQI10N60C डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 600V N-Channel MOSFET - Fairchild Semiconductor

भाग संख्या FQI10N60C
समारोह 600V N-Channel MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FQI10N60C?> डेटा पत्रक पीडीएफ

FQI10N60C pdf
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
600
--
--
--
--
--
--
0.7
--
--
--
--
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
2.0 --
4.0
VGS = 10 V, ID = 4.75 A
-- 0.6 0.73
VDS = 40 V, ID = 4.75 A (Note 4) --
8.0
--
V
S
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 1570 2040
-- 166 215
-- 18
24
pF
pF
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 300 V, ID = 9.5A,
RG = 25
(Note 4, 5)
VDS = 480 V, ID = 9.5A,
VGS = 10 V
(Note 4, 5)
--
--
--
--
--
--
--
23
69
144
77
44
6.7
18.5
55
150
300
165
57
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
-- -- 9.5
ISM Maximum Pulsed Drain-Source Diode Forward Current
-- -- 38
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 9.5 A
-- -- 1.4
trr Reverse Recovery Time
VGS = 0 V, IS = 9.5 A,
-- 420
--
Qrr Reverse Recovery Charge
dIF / dt = 100 A/µs
(Note 4) --
4.2
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 14.2mH, IAS = 9.5 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 9.5A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
A
A
V
ns
µC
©2003 Fairchild Semiconductor Corporation
Rev. A, October 2003

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डाउनलोड[ FQI10N60C Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
FQI10N60C600V N-Channel MOSFETFairchild Semiconductor
Fairchild Semiconductor


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