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FQH18N50V2 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 500V N-Channel MOSFET - Fairchild Semiconductor

भाग संख्या FQH18N50V2
समारोह 500V N-Channel MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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FQH18N50V2 pdf
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
500
--
--
0.5
-- V
-- V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 500 V, VGS = 0 V
VDS = 400 V, TC = 125°C
-- --
1 µA
-- -- 10 µA
IGSSF
IGSSR
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
-- -- 100 nA
-- -- -100 nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
3.0 --
5.0
VGS = 10 V, ID = 10 A
-- 0.225 0.265
VDS = 40 V, ID = 10 A
(Note 4) --
16
--
V
S
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Coss
Output Capacitance
Coss eff. Effective Output Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
VDS = 400 V, VGS = 0 V,
f = 1.0 MHz
VDS = 0V to 400 V, VGS = 0 V
-- 2530 3290 pF
-- 300 390 pF
-- 11 14.3 pF
-- 76 -- pF
-- 150
--
pF
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 250 V, ID = 18 A,
RG = 25
(Note 4, 5)
VDS = 400 V, ID = 18 A,
VGS = 10 V
(Note 4, 5)
--
--
--
--
--
--
--
40 90
150 310
95 200
110 230
42 55
12 --
14 --
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
-- -- 20
ISM Maximum Pulsed Drain-Source Diode Forward Current
-- -- 80
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 20 A
-- -- 1.4
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 18 A,
dIF / dt = 100 A/µs
(Note 4)
--
--
420
5.4
--
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 1.5mH, IAS = 20A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 18A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
A
A
V
ns
µC
©2003 Fairchild Semiconductor Corporation
Rev. A, December 2003

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