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FQH140N10 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 100V N-Channel MOSFET - Fairchild Semiconductor

भाग संख्या FQH140N10
समारोह 100V N-Channel MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FQH140N10?> डेटा पत्रक पीडीएफ

FQH140N10 pdf
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 80 V, VGS = 0 V
VDS = 64 V, TC = 150°C
VGS = 25 V, VDS = 0 V
VGS = -25 V, VDS = 0 V
100
--
--
--
--
--
--
0.08
--
--
--
--
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 70 A
VDS = 30 V, ID = 70 A
(Note 4)
2.0
--
--
--
0.008
80
4.0
0.01
--
V
S
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 6100 7900 pF
-- 2000 2600 pF
-- 420 550 pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 40 V, ID = 140 A,
RG = 25
(Note 4, 5)
VDS = 64 V, ID = 140 A,
VGS = 10 V
(Note 4, 5)
--
--
--
--
--
--
--
75 160 ns
940 1890 ns
350 710 ns
360 730 ns
220 285 nC
39 -- nC
114 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
-- -- 140 A
ISM Maximum Pulsed Drain-Source Diode Forward Current
-- -- 560 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 140 A
-- -- 1.5 V
trr Reverse Recovery Time
VGS = 0 V, IS = 140 A,
-- 140 -- ns
Qrr Reverse Recovery Charge
dIF / dt = 100 A/µs
(Note 4) --
730
--
nC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 0.115mH, IAS = 140A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 140A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
6. Continuous Drain Current Calculated by Maximum Junction Temperature : Limited by Package
©2003 Fairchild Semiconductor Corporation
Rev. A, August 2003

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डाउनलोड[ FQH140N10 Datasheet.PDF ]


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