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FQD9N08L डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 80V LOGIC N-Channel MOSFET - Fairchild Semiconductor

भाग संख्या FQD9N08L
समारोह 80V LOGIC N-Channel MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FQD9N08L?> डेटा पत्रक पीडीएफ

FQD9N08L pdf
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 250 µA
80 -- -- V
ID = 250 µA, Referenced to 25°C -- 0.08 -- V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 80 V, VGS = 0 V
VDS = 64 V, TC = 125°C
-- -- 1 µA
-- -- 10 µA
IGSSF
IGSSR
Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V
Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V
-- -- 100 nA
-- -- -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on) Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
1.0 --
2.0
VGS = 10 V, ID = 3.7 A
VGS = 5 V, ID = 3.7 A
--
0.15 0.21
0.17 0.23
VDS = 25 V, ID = 3.7 A (Note 4) --
4.8
--
V
S
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 215 280
-- 70
90
-- 16
20
pF
pF
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 40 V, ID = 9.3 A,
RG = 25
-- 6.5
23
-- 180 370
-- 13
35
(Note 4, 5)
--
30
70
VDS = 64 V, ID = 9.3 A,
-- 4.7 6.1
VGS = 5 V
-- 1.2
--
(Note 4, 5) --
2.8
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 7.4 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 9.3 A,
dIF / dt = 100 A/µs
(Note 4)
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 1.38mH, IAS = 7.4A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 9.3A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
--
--
--
--
--
-- 7.4
-- 29.6
-- 1.5
54 --
80 --
A
A
V
ns
nC
©2000 Fairchild Semiconductor International
Rev. A2, December 2000

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डाउनलोड[ FQD9N08L Datasheet.PDF ]


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