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FQD6P25 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 250V P-Channel MOSFET - Fairchild Semiconductor

भाग संख्या FQD6P25
समारोह 250V P-Channel MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FQD6P25?> डेटा पत्रक पीडीएफ

FQD6P25 pdf
Electrical CharacteristicsTC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = -250 µA
ID = -250 µA, Referenced to 25°C
VDS = -250 V, VGS = 0 V
VDS = -200 V, TC = 125°C
VGS = -30 V, VDS = 0 V
VGS = 30 V, VDS = 0 V
-250
--
--
--
--
--
--
-0.1
--
--
--
--
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = -250 µA
-3.0 --
VGS = -10 V, ID = -2.35 A
-- 0.82
VDS = -40 V, ID = -2.35 A (Note 4)
--
3.0
Dynamic Characteristics
Ciss
Coss
Input Capacitance
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
-- 600
-- 115
-- 20
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = -125 V, ID = -6.0 A,
RG = 25
(Note 4, 5)
VDS = -200 V, ID = -6.0 A,
VGS = -10 V
(Note 4, 5)
--
--
--
--
--
--
--
13
75
40
50
21
4.7
10.7
--
--
-1
-10
-100
100
-5.0
1.1
--
780
150
25
35
160
90
110
27
--
--
V
V/°C
µA
µA
nA
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -4.7 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = -6.0 A,
dIF / dt = 100 A/µs
(Note 4)
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 39mH, IAS = -4.7A, VDD = -50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD  -6.0A, di/dt  300A/µs, VDD  BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width  300µs, Duty cycle  2%
5. Essentially independent of operating temperature
--
--
--
--
--
-- -4.7
-- -18.8
-- -5.0
170 --
1.1 --
A
A
V
ns
µC
©2000 Fairchild Semiconductor International
Rev. A, April 2000

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डाउनलोड[ FQD6P25 Datasheet.PDF ]


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