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FQD6N40C डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 400V N-Channel MOSFET - Fairchild Semiconductor

भाग संख्या FQD6N40C
समारोह 400V N-Channel MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FQD6N40C?> डेटा पत्रक पीडीएफ

FQD6N40C pdf
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 250 µA
400 --
ID = 250 µA, Referenced to 25°C -- 0.54
IDSS
Zero Gate Voltage Drain Current
VDS = 400 V, VGS = 0 V
VDS = 320 V, TC = 125°C
-- --
-- --
IGSSF
IGSSR
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
-- --
-- --
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 2.25A
VDS = 40 V, ID = 2.25A
(Note 4)
2.0
--
--
--
0.83
4.7
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 480
-- 80
-- 15
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 200 V, ID = 6A,
RG = 25
(Note 4, 5)
VDS = 320 V, ID = 6A,
VGS = 10 V
(Note 4, 5)
--
--
--
--
--
--
--
13
65
21
38
16
2.3
8.2
--
--
1
10
100
-100
4.0
1
--
625
105
20
35
140
55
85
20
--
--
V
V/°C
µA
µA
nA
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
-- -- 4.5
ISM Maximum Pulsed Drain-Source Diode Forward Current
-- -- 18
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 4.5 A
-- -- 1.4
trr Reverse Recovery Time
VGS = 0 V, IS = 6 A,
-- 230
--
Qrr Reverse Recovery Charge
dIF / dt = 100 A/µs
(Note 4) --
1.7
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 13.7 mH, IAS = 6 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 6A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
A
A
V
ns
µC
©2003 Fairchild Semiconductor Corporation
Rev. A, October 2003

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