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FQD5N20L डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 200V LOGIC N-Channel MOSFET - Fairchild Semiconductor

भाग संख्या FQD5N20L
समारोह 200V LOGIC N-Channel MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FQD5N20L?> डेटा पत्रक पीडीएफ

FQD5N20L pdf
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 250 µA
200 --
ID = 250 µA, Referenced to 25°C -- 0.18
IDSS
Zero Gate Voltage Drain Current
VDS = 200 V, VGS = 0 V
VDS = 160 V, TC = 125°C
-- --
-- --
IGSSF
IGSSR
Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V
Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V
-- --
-- --
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on) Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
1.0 --
VGS = 10 V, ID = 1.9 A
VGS = 5 V, ID = 1.9 A
(Note 4)
--
0.94
0.98
VDS = 30 V, ID = 1.9 A
-- 3.35
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 250
-- 40
-- 6
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 100 V, ID = 4.5 A,
RG = 25
(Note 4, 5)
VDS = 160 V, ID = 4.5 A,
VGS = 5 V
(Note 4, 5)
--
--
--
--
--
--
--
9
90
15
50
4.8
1.2
2.4
--
--
1
10
100
-100
2.0
1.2
1.25
--
325
50
8
25
190
40
110
6.2
--
--
V
V/°C
µA
µA
nA
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 3.8 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 4.5 A,
dIF / dt = 100 A/µs
(Note 4)
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 6.2mH, IAS = 3.8A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 4.5A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
--
--
--
--
--
-- 3.8
-- 15.2
-- 1.5
95 --
0.3 --
A
A
V
ns
µC
©2000 Fairchild Semiconductor International
Rev. A2, December 2000

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