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FQD4P25 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 250V P-Channel MOSFET - Fairchild Semiconductor

भाग संख्या FQD4P25
समारोह 250V P-Channel MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=FQD4P25?> डेटा पत्रक पीडीएफ

FQD4P25 pdf
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = -250 µA
ID = -250 µA, Referenced to 25°C
VDS = -250 V, VGS = 0 V
VDS = -200 V, TC = 125°C
VGS = -30 V, VDS = 0 V
VGS = 30 V, VDS = 0 V
-250
--
--
--
--
--
--
-0.21
--
--
--
--
--
--
-1
-10
-100
100
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = -250 µA
-3.0 --
VGS = -10 V, ID = -1.55 A
-- 1.63
VDS = -40 V, ID = -1.55 A (Note 4)
--
2.0
-5.0
2.1
--
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
-- 325 420
-- 65 85
-- 10 13
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = -125 V, ID = -4.0 A,
RG = 25
(Note 4, 5)
VDS = -200 V, ID = -4.0 A,
VGS = -10 V
(Note 4, 5)
--
--
--
--
--
--
--
9.5
60
14
27
10.3
2.7
5.2
30
130
40
65
14
--
--
V
V/°C
µA
µA
nA
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
-- -- -3.1 A
ISM Maximum Pulsed Drain-Source Diode Forward Current
--
-- -12.4
A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -3.1 A
-- -- -5.0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = -4.0 A,
-- 140
dIF / dt = 100 A/µs
(Note 4) -- 0.64
--
--
ns
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 46.6mH, IAS = -3.1A, VDD = -50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD -4.0A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
©2000 Fairchild Semiconductor International
Rev. A2, December 2000

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डाउनलोड[ FQD4P25 Datasheet.PDF ]


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