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FQD3N60 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 600V N-Channel MOSFET - Fairchild Semiconductor

भाग संख्या FQD3N60
समारोह 600V N-Channel MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FQD3N60?> डेटा पत्रक पीडीएफ

FQD3N60 pdf
Electrical CharacteristicsTC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
600
--
--
--
--
--
--
0.6
--
--
--
--
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 1.2 A
VDS = 50 V, ID = 1.2 A (Note 4)
3.0
--
--
--
2.8
2.4
Dynamic Characteristics
Ciss
Coss
Input Capacitance
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 350
-- 50
-- 5.5
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 300 V, ID = 3.0 A,
RG = 25
(Note 4, 5)
VDS = 480 V, ID = 3.0 A,
VGS = 10 V
(Note 4, 5)
--
--
--
--
--
--
--
10
30
20
30
10
2.7
4.9
--
--
10
100
100
-100
5.0
3.6
--
450
65
7.5
30
70
50
70
13
--
--
V
V/°C
µA
µA
nA
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
-- -- 2.4
ISM Maximum Pulsed Drain-Source Diode Forward Current
-- -- 9.6
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.4 A
-- -- 1.4
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 3.0 A,
-- 210
dIF / dt = 100 A/µs
(Note 4)
--
1.2
--
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 64mH, IAS = 2.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD  3.0A, di/dt  200A/µs, VDD  BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width  300µs, Duty cycle  2%
5. Essentially independent of operating temperature
A
A
V
ns
µC
©2000 Fairchild Semiconductor International
Rev. A, April 2000

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डाउनलोड[ FQD3N60 Datasheet.PDF ]


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