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FQD30N06 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 60V N-Channel MOSFET - Fairchild Semiconductor

भाग संख्या FQD30N06
समारोह 60V N-Channel MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=FQD30N06?> डेटा पत्रक पीडीएफ

FQD30N06 pdf
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 250 µA
60 -- -- V
ID = 250 µA, Referenced to 25°C -- 0.06 -- V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 60 V, VGS = 0 V
VDS = 48 V, TC = 125°C
-- -- 1 µA
-- -- 10 µA
IGSSF
IGSSR
Gate-Body Leakage Current, Forward VGS = 25 V, VDS = 0 V
Gate-Body Leakage Current, Reverse VGS = -25 V, VDS = 0 V
-- -- 100 nA
-- -- -100 nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 11.4 A
VDS = 25 V, ID = 11.4 A (Note 4)
2.0 --
4.0
--
--
0.036 0.045
-- 15
--
V
S
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 725 945
-- 270 350
-- 40
52
pF
pF
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 30 V, ID = 15 A,
RG = 25
(Note 4, 5)
VDS = 48 V, ID = 30 A,
VGS = 10 V
(Note 4, 5)
--
--
--
--
--
--
--
10 30
85 180
35 80
40 90
19 25
5.4 --
8.5 --
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 22.7 A
trr Reverse Recovery Time
VGS = 0 V, IF = 30 A,
Qrr Reverse Recovery Charge
dIF / dt = 100 A/µs
(Note 4)
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 630µH, IAS = 22.7A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 30A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
--
--
--
--
--
-- 22.7
-- 90.8
-- 1.5
45 --
65 --
A
A
V
ns
nC
©2009 Fairchild Semiconductor Corporation
Rev. A2. January 2009

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डाउनलोड[ FQD30N06 Datasheet.PDF ]


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