DataSheet.in

FQD24N08 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 80V N-Channel MOSFET - Fairchild Semiconductor

भाग संख्या FQD24N08
समारोह 80V N-Channel MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=FQD24N08?> डेटा पत्रक पीडीएफ

FQD24N08 pdf
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 250 µA
80 --
ID = 250 µA, Referenced to 25°C -- 0.08
--
--
IDSS
Zero Gate Voltage Drain Current
VDS = 80 V, VGS = 0 V
VDS = 64 V, TC = 125°C
-- --
-- --
1
10
IGSSF
Gate-Body Leakage Current, Forward VGS = 25 V, VDS = 0 V
-- -- 100
IGSSR
Gate-Body Leakage Current, Reverse VGS = -25 V, VDS = 0 V
-- -- -100
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on) Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 9.8 A
VDS = 30 V, ID = 9.8 A (Note 4)
2.0 --
-- 0.048
-- 11.5
4.0
0.06
--
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 580 750
-- 210 270
-- 50 65
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 40 V, ID = 24 A,
RG = 25
-- 10
30
-- 105 220
-- 30
70
(Note 4, 5)
--
35
80
VDS = 64 V, ID = 24 A,
VGS = 10 V
(Note 4, 5)
--
--
--
19
4.2
9.6
25
--
--
V
V/°C
µA
µA
nA
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 19.6 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 24 A,
dIF / dt = 100 A/µs
(Note 4)
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 0.82mH, IAS = 19.6A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 24A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
--
--
--
--
--
-- 19.6
-- 78.4
-- 1.5
63 --
130 --
A
A
V
ns
nC
©2000 Fairchild Semiconductor International
Rev. A, August 2000

विन्यास 9 पेज
डाउनलोड[ FQD24N08 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
FQD24N0880V N-Channel MOSFETFairchild Semiconductor
Fairchild Semiconductor


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English