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FQD20N06LE डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 60V LOGIC N-Channel MOSFET - Fairchild Semiconductor

भाग संख्या FQD20N06LE
समारोह 60V LOGIC N-Channel MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FQD20N06LE?> डेटा पत्रक पीडीएफ

FQD20N06LE pdf
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 250 µA
60 -- -- V
ID = 250 µA, Referenced to 25°C -- 0.06 -- V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 60 V, VGS = 0 V
VDS = 48 V, TC = 125°C
-- -- 1 µA
-- -- 10 µA
IGSSF
IGSSR
Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V
Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V
-- -- 10 µA
-- -- -10 µA
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on) Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 8.6 A
VGS = 5 V, ID = 8.6 A
VDS = 25 V, ID = 8.6 A
(Note 4)
1.0 --
2.5
-- 0.046 0.06
-- 0.057 0.075
-- 11
--
V
S
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 506 665
-- 175 230
-- 35
45
pF
pF
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 30 V, ID = 10.5 A,
RG = 25
-- 13
39
-- 220 453
-- 45 103
(Note 4, 5) -- 100 214
VDS = 48 V, ID = 21 A,
-- 9.5
VGS = 5 V
-- 2.5
(Note 4, 5) -- 5.5
13
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
-- -- 17.2 A
ISM Maximum Pulsed Drain-Source Diode Forward Current
-- -- 68.8 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 17.2 A
-- -- 1.5 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IF = 21 A,
-- 64
dIF / dt = 100 A/µs
(Note 4) -- 105
--
--
ns
nC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 670µH, IAS = 17.2A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 21A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
©2001 Fairchild Semiconductor Corporation
Rev. B1. May 2001

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