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FKBL410 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - FAST RECOVERY BRIDGE RECTIFIERS - EIC discrete Semiconductors

भाग संख्या FKBL410
समारोह FAST RECOVERY BRIDGE RECTIFIERS
मैन्युफैक्चरर्स EIC discrete Semiconductors 
लोगो EIC discrete Semiconductors लोगो 
पूर्व दर्शन
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<?=FKBL410?> डेटा पत्रक पीडीएफ

FKBL410 pdf
RATING AND CHARACTERISTIC CURVES ( FKBL400 - FKBL410 )
FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50
10
+ 0.5 A
Trr
+
50 Vdc
(approx.)
D.U.T.
PULSE
GENERATOR
( NOTE 2 )
0
- 0.25
1 OSCILLOSCOPE
( NOTE 1 )
- 1.0 A
SET TIME BASE FOR 50/100 ns/cm
NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.
1 cm
2. Rise time = 10 ns max., Source Impedance = 50 ohms.
3. All Resistors = Non-inductive Types.
FIG.2 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
5
Heatsink Mounting, Tc
2.0" X 1.6" X 0.3"
4 ( 5.0cm X 4.0cm X 0.8cm )Al.Plate
FIG.3 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
150
Tc = 50 °C
120
3 90
2 60
1
60Hz RESISTIVE OR INDUCTIVE LOAD
0
0 25 50 75 100 125 150
CASE TEMPERATURE, ( °C)
175
30
0
12
4 6 10 20 40 60 100
NUMBER OF CYCLES AT 60Hz
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
PER DIODE
100
Pulse Width = 300 µs
1% Duty Cycle
TJ = 25 °C
10
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE
10
TJ = 100 °C
1.0
1.0
0.1
0.01
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
FORWARD VOLTAGE, VOLTS
0.1
TJ = 25 °C
0.01 0
20 40 60 80 100 120 140
PERCENT OF RATED REVERSE
VOLTAGE, (%)

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डाउनलोड[ FKBL410 Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
FKBL410FAST RECOVERY BRIDGE RECTIFIERSEIC discrete Semiconductors
EIC discrete Semiconductors


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