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FK20SM-9 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - HIGH-SPEED SWITCHING USE - Mitsubishi Electric Semiconductor

भाग संख्या FK20SM-9
समारोह HIGH-SPEED SWITCHING USE
मैन्युफैक्चरर्स Mitsubishi Electric Semiconductor 
लोगो Mitsubishi Electric Semiconductor लोगो 
पूर्व दर्शन
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<?=FK20SM-9?> डेटा पत्रक पीडीएफ

FK20SM-9 pdf
MITSUBISHI Nch POWER MOSFET
FK20SM-9
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
V (BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = 1mA, VGS = 0V
IG = ±100µA, VDS = 0V
VGS = ±25V, VDS = 0V
VDS = 450V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 10A, VGS = 10V
ID = 10A, VGS = 10V
ID = 10A, VDS = 10V
VDS = 25V, VGS = 0V, f = 1MHz
VDD = 200V, ID = 10A, VGS = 10V, RGEN = RGS = 50
IS = 10A, VGS = 0V
Channel to case
IS = 20A, dis/dt = –100A/µs
Limits
Unit
Min. Typ. Max.
450 —
—V
±30 —
—V
— — ±10 µA
——
1 mA
2 3 4V
0.23
0.30
2.30 3.00
V
7.0 10.0 —
S
— 2800 — pF
— 350 — pF
— 55 — pF
— 60 — ns
— 80 — ns
— 270 — ns
— 80 — ns
— 1.5 2.0 V
— — 0.45 °C/W
— — 150 ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
300
250
200
150
100
50
0
0 50 100 150 200
CASE TEMPERATURE TC (°C)
MAXIMUM SAFE OPERATING AREA
102
7
5
3 tw=100µs
2
101
7 1ms
5
3
2 10ms
100
7
5
3
2
TC = 25°C
Single Pulse
100ms
DC
10–1
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999

विन्यास 5 पेज
डाउनलोड[ FK20SM-9 Datasheet.PDF ]


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