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FJPF13009 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - NPN Silicon Transistor - Fairchild Semiconductor

भाग संख्या FJPF13009
समारोह NPN Silicon Transistor
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
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<?=FJPF13009?> डेटा पत्रक पीडीएफ

FJPF13009 pdf
Absolute Maximum Ratings(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
VCBO
VCEO
VEBO
IC
ICP
IB
PD
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Total Device Dissipation (TC = 25°C)
Junction Temperature
Storage Temperature Range
700
400
9
12
24
6
50
150
-65 to +150
V
V
V
A
A
A
W
°C
°C
Note:
2. These ratings are based on a maximum junction temperature of 150°C. These are steady-state limits. Fairchild
Semiconductor should be consulted on application involving pulsed or low-duty-cycle operations.
Electrical Characteristics
Values are at TC = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
VCEO(sus)
IEBO
hFE1
hFE2
Collector-Emitter Sustaining Voltage
Emitter Cut-Off Current
DC Current Gain(3)
VCE(sat)
Collector-Emitter Saturation
Voltage(3)
VBE(sat) Base-Emitter Saturation Voltage(3)
Cob
fT
tON
tSTG
tF
Output Capacitance
Current Gain Bandwidth Product
Turn-On Time
Storage Time
Fall Time
IC = 10 mA, IB = 0
VEB = 9 V, IC = 0
VCE = 5 V, IC = 5 A
VCE = 5 V, IC = 8 A
IC = 5 A, IB = 1 A
IC = 8 A, IB = 1.6 A
IC = 12 A, IB = 3 A
IC = 5 A, IB = 1 A
IC = 8 A, IB = 1.6 A
VCB = 10 V, f = 0.1 MHz
VCE = 10 V, IC = 0.5 A
VCC = 125 V, IC = 8 A,
IB1 = - IB2 = 1.6 A,
RL = 15.6 Ω
Note:
3. Pulse test: pulse width 300 μs, duty cycle 2%
Min.
400
8
6
4
Typ.
180
Max
1
40
30
1.0
1.5
3.0
1.2
1.6
1.1
3.0
0.7
Unit
V
mA
V
V
pF
MHz
μs
hFE Classification
Classification
hFE1
H1
8 ~ 17
H2
15 ~ 28
© 2003 Fairchild Semiconductor Corporation
FJPF13009 Rev. 1.2.1
2
www.fairchildsemi.com

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