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FJP5304D डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - NPN Silicon Transistor - Fairchild Semiconductor

भाग संख्या FJP5304D
समारोह NPN Silicon Transistor
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FJP5304D?> डेटा पत्रक पीडीएफ

FJP5304D pdf
hFE
VCE(sat)
DC Current Gain
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
Vf Internal Diode Forward Voltage Drop
Inductive Load Switching (VCC = 200V)
tstg Storage Time
tf Fall Time
Resistive Load Switching (VCC = 250V)
tstg Storage Time
tf Fall Time
* Pulse test: PW300μs, Duty cycle2%
Thermal Characteristics
Symbol
Parameter
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
VCE = 5V, IC = 10mA
VCE = 5V, IC = 2A
IC = 0.5A, IB = 0.1A
IC = 1A, IB = 0.2A
IC = 2.5A, IB = 0.5A
IC = 0.5A, IB = 0.1A
IC = 1A, IB = 0.2A
IC = 2.5A, IB = 0.5A
IF = 2A
10
8
40
0.7 V
1.0
1.5
1.1 V
1.2
1.3
2.5 V
IC = 2A, IB1 = 0.4A
0.6 μs
VBE(off) = -5V, L = 200μH
0.1
IC = 2A, IB1 = IB2 = 0.4A
TP = 30μs
2.9 μs
0.2
Max.
1.78
62.5
Units
°C/W
°C/W
© 2008 Fairchild Semiconductor Corporation
FJP5304D Rev. A
2
www.fairchildsemi.com

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डाउनलोड[ FJP5304D Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
FJP5304DNPN Silicon TransistorFairchild Semiconductor
Fairchild Semiconductor


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