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D1207UK डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - METAL GATE RF SILICON FET - Seme LAB

भाग संख्या D1207UK
समारोह METAL GATE RF SILICON FET
मैन्युफैक्चरर्स Seme LAB 
लोगो Seme LAB लोगो 
पूर्व दर्शन
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<?=D1207UK?> डेटा पत्रक पीडीएफ

D1207UK pdf
D1207UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
BVDSS
Drain–Source Breakdown
Voltage
PER SIDE
VGS = 0
ID = 10mA
40
IDSS
Zero Gate Voltage
Drain Current
VDS = 12.5V
VGS = 0
IGSS
VGS(th)
gfs
Gate Leakage Current
Gate Threshold Voltage*
Forward Transconductance*
VGS = 20V
ID = 10mA
VDS = 10V
VDS = 0
VDS = VGS
ID = 1A
1
0.8
GPS
η
VSWR
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
TOTAL DEVICE
PO = 20W
VDS = 12.5V
IDQ = 0.8A
f = 400MHz
10
50
20:1
Ciss
Coss
Crss
PER SIDE
Input Capacitance
VDS = 0
VGS = –5V f = 1MHz
Output Capacitance
VDS = 12.5V VGS = 0 f = 1MHz
Reverse Transfer Capacitance VDS = 12.5V VGS = 0 f = 1MHz
* Pulse Test: Pulse Duration = 300 µs , Duty Cycle 2%
Typ.
Max. Unit
V
1 mA
1 µA
7V
S
dB
%
60 pF
40 pF
4 pF
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
RTHj–case
Thermal Resistance Junction – Case
Max. 1.75°C / W
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 10/95

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डाउनलोड[ D1207UK Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
D1207UKMETAL GATE RF SILICON FETSeme LAB
Seme LAB


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