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BAV99S डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon Switching Diode Array (For high-speed switching applications Connected in series Internal galvanic isolated Diodes in one package) - Siemens Semiconductor Group

भाग संख्या BAV99S
समारोह Silicon Switching Diode Array (For high-speed switching applications Connected in series Internal galvanic isolated Diodes in one package)
मैन्युफैक्चरर्स Siemens Semiconductor Group 
लोगो Siemens Semiconductor Group लोगो 
पूर्व दर्शन
1 Page
		
<?=BAV99S?> डेटा पत्रक पीडीएफ

BAV99S pdf
BAV 99S
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC characteristics
Breakdown voltage
I(BR) = 100 µA
V(BR)
70 -
-V
Forward voltage
IF = 1 mA
IF = 10 mA
IF = 50 mA
IF = 150 mA
VF mV
- - 715
- - 855
- - 1000
- - 1250
Reverse current
VR = 70 V
Reverse current
VR = 25 V, TA = 150 °C
VR = 70 V, TA = 150 °C
IR - - 2.5 µA
IR nA
- - 30
- - 50
AC characteristics
Diode capacitance
VR = 0 V, f = 1 MHz
Reverse recovery time
IF = 10 mA, IR = 10 mA, RL = 100 ,
measured at IR = 1mA
CD - - 1.5 pF
trr - - 6 ns
Test circuit for reverse recovery time
D.U.T.
Oscillograph
ΙF
EHN00019
Pulse generator: tp = 100ns, D = 0.05,
tr = 0.6ns, Ri = 50
Oscillograph: R = 50, tr = 0.35ns,
C 1pF
SSeemmicioconndduuctcotor rGGrorouupp
22
Apr1-29798-1-1919-081

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