DataSheet.in

BAS40 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - SURFACE MOUNT SCHOTTKY BARRIER DIODE - Diodes Incorporated

भाग संख्या BAS40
समारोह SURFACE MOUNT SCHOTTKY BARRIER DIODE
मैन्युफैक्चरर्स Diodes Incorporated 
लोगो Diodes Incorporated लोगो 
पूर्व दर्शन
1 Page
		
<?=BAS40?> डेटा पत्रक पीडीएफ

BAS40 pdf
Marking Information
BAS40/ -04/ -05/ -06
Shanghai A/T Site
Chengdu A/T Site
xxx = Product Type Marking Code
K43 = BAS40
K44 = BAS40-04
K45 = BAS40-05
K46 = BAS40-06
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
Y̅ M = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y̅ = Year (ex: A = 2013)
M = Month (ex: 9 = September)
Date Code Key
Year 1999
Code
K
2000
L
2001
M
Month
Code
Jan
1
Feb
2
2002
N
Mar
3
2003 2004 2005
P RS
Apr May
45
2006 2007 2008
TUV
Jun Jul
67
2009 2010 2011
WX Y
Aug Sep
89
2012
Z
Oct
O
2013 2014 2015
ABC
Nov Dec
ND
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current (Note 6)
Forward Surge Current (Note 6)
@ t < 1.0s
Symbol
VRRM
VRWM
VR
IFM
IFSM
Value
40
200
600
Unit
V
mA
mA
Thermal Characteristics
Characteristic
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient Air (Note 6)
Operating Temperature Range
Storage Temperature Range
Symbol
PD
RJA
TJ
TSTG
Value
350
357
-55 to +125
-65 to +150
Unit
mW
°C/W
°C
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Reverse Breakdown Voltage (Note 7)
Forward Voltage
Reverse Leakage Current (Note 7)
Total Capacitance
Reverse Recovery Time
Symbol
V(BR)R
Min
40
VF 
IR 
CT 
trr 
Typ


20
4.0

Max

380
1000
200
5.0
5.0
Unit
V
mV
nA
pF
ns
Test Condition
IR = 10µA
tp < 300µs, IF = 1.0mA
tp < 300µs, IF = 40mA
tp < 300µs, VR = 30V
VR = 0V, f =1.0MHz
IF = IR = 10mA to IR = 1.0mA,
RL = 100
Notes:
6. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
7. Short duration pulse test used to minimize self-heating effect.
BAS40/ -04/ -05/ -06
Document number: DS11006 Rev. 25 - 2
2 of 5
www.diodes.com
December 2013
© Diodes Incorporated

विन्यास 5 पेज
डाउनलोड[ BAS40 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
BAS4CASE 318-08/ STYLE 8 SOT-23 TO-236ABMotorola  Inc
Motorola Inc
BAS4Schottky DiodesGeneral Semiconductor
General Semiconductor


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English