DataSheet.in

BAS4 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Schottky Diodes - General Semiconductor

भाग संख्या BAS4
समारोह Schottky Diodes
मैन्युफैक्चरर्स General Semiconductor 
लोगो General Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=BAS4?> डेटा पत्रक पीडीएफ

BAS4 pdf
BAS40 THRU BAS40-06
ELECTRICAL CHARACTERISTICS
Ratings for one diode at 25 °C ambient temperature unless otherwise specified
Symbol
Min.
Typ.
Max.
Reverse Breakdown Voltage
Tested with 10 µA Pulses
V(BR)R
40
Leakage Current
Pulse Test tp < 300 µs
at VR = 30 V
Forward Voltage
Pulse Test tp < 300 µs
at IF = 1 mA
at IF = 40 mA
IR – 20 100
VF – – 380
VF – – 1000
Capacitance
at VR = 0 V, f = 1 MHz
Ctot
4.0 5
Reverse Recovery Time
from IF = 10 mA through IR = 10 mA to IR = 1 mA
trr
––5
Thermal Resistance Junction to Ambient Air
RthJA
4301)
1) Device on fiberglass substrate, see layout
.30 (7.5)
.12 (3)
.59 (15)
.03 (0.8)
.47 (12)
0.2 (5)
.04 (1) .08 (2)
.04 (1)
.08 (2)
.06 (1.5)
.20 (5.1)
Dimensions in inches (millimeters)
Layout for RthJA test
Thickness: Fiberglass 0.059 in (1.5 mm)
Copper leads 0.012 in (0.3 mm)
Unit
V
nA
mV
mV
pF
ns
K/W

विन्यास 2 पेज
डाउनलोड[ BAS4 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
BAS100ATB6SURFACE MOUNT DUAL ISOLATED OPPOSING SILICON SCHOTTKY DIODESPan Jit International
Pan Jit International
BAS101High Voltage Switching DiodesNXP
NXP


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English