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BAS125-07 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon Schottky Diode (For low-loss/ fast-recovery/ meter protection/ bias isolation and clamping applications) - Siemens Semiconductor Group

भाग संख्या BAS125-07
समारोह Silicon Schottky Diode (For low-loss/ fast-recovery/ meter protection/ bias isolation and clamping applications)
मैन्युफैक्चरर्स Siemens Semiconductor Group 
लोगो Siemens Semiconductor Group लोगो 
पूर्व दर्शन
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<?=BAS125-07?> डेटा पत्रक पीडीएफ

BAS125-07 pdf
BAS 125-07W
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC characteristics
Reverse current
VR = 20 V
VR = 25 V
Forward voltage
IF = 1 mA
IF = 10 mA
IF = 35 mA
IR µA
- - 150
- - 200
VF mV
- 385 400
- 530 650
- 800 900
AC characteristics
Diode capacitance
VR = 0 V, f = 1 MHz
Differential forward resistance
IF = 5 mA, f = 10 kHz
CT - - 1.1 pF
rf - 16 -
SSeemmicioconndduuctcotor rGGrorouupp
22
Jun1-90948--11919-081

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डाउनलोड[ BAS125-07 Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
BAS125-04Silicon Schottky Diodes (For low-loss/ fast-recovery/ meter protection/ bias isolation and clamping applications)Siemens Semiconductor Group
Siemens Semiconductor Group
BAS125-04WPreliminary data Silicon Schottky Diodes (For low-loss/ fast-recovery/ meter protection/ bias isolation and clamping application)Siemens Semiconductor Group
Siemens Semiconductor Group


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