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BAR81W डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon RF Switching Diode - Infineon Technologies AG

भाग संख्या BAR81W
समारोह Silicon RF Switching Diode
मैन्युफैक्चरर्स Infineon Technologies AG 
लोगो Infineon Technologies AG लोगो 
पूर्व दर्शन
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<?=BAR81W?> डेटा पत्रक पीडीएफ

BAR81W pdf
BAR81...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Reverse current
VR = 20 V
Forward voltage
IF = 100 mA
IR - - 20 nA
VF - 0.93 1 V
AC Characteristics
Diode capacitance
VR = 1 V, f = 1 MHz
VR = 3 V, f = 1 MHz
Forward resistance
IF = 5 mA, f = 100 MHz
Charge carrier life time
IF = 10 mA, IR = 6 mA, measured at IR = 3 mA,
RL = 100 
I-region width
Shunt insertion loss1)
VR = 3 V, f = 1.89 GHz
Shunt isolation1)
IF = 10 mA , f = 1.89 GHz
CT
rf
 rr
WI
|S21|2
|S21|2
pF
- 0.6 1
- 0.57 0.9
- 0.7 1 
- 80 - ns
- 3.5 - µm
- 0.7 - dB
- 30 -
Configuration of the shunt-diode
- A perfect ground is essential for optimum isolation
- The anode pins should be used as passage for RF
1For more information please refer to Application Note 049.
2 Dec-20-2002

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