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BAR81W डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon RF Switching Diode Preliminary data (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) - Siemens Semiconductor Group

भाग संख्या BAR81W
समारोह Silicon RF Switching Diode Preliminary data (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss)
मैन्युफैक्चरर्स Siemens Semiconductor Group 
लोगो Siemens Semiconductor Group लोगो 
पूर्व दर्शन
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<?=BAR81W?> डेटा पत्रक पीडीएफ

BAR81W pdf
BAR 81W
Electrical Characteristics at TA = 25 °C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
Characteristics
Reverse current
VR = 20 V
Forward voltage
IF = 100 mA
IR - - 20 nA
VF - 0.93 1 V
AC characteristics
Diode capacitance
VR = 1 V, f = 1 MHz
VR = 3 V, f = 1 MHz
Forward resistance
IF = 5 mA, f = 100 MHz
Series inductance
CT pF
- 0.6 -
- 0.57 -
rf - 0.7 -
Ls - 0.15 - nH
Configuration of the shunt-diode
- A perfect ground is essential for optimum isolation
- The anode pins should be used as passage for RF
SSeemmicioconndduuctcotor rGGrorouupp
22
Sep-109498-1-1919-081

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