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BAR81 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Preliminary data Silicon RF Switching Diode (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) - Siemens Semiconductor Group

भाग संख्या BAR81
समारोह Preliminary data Silicon RF Switching Diode (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss)
मैन्युफैक्चरर्स Siemens Semiconductor Group 
लोगो Siemens Semiconductor Group लोगो 
पूर्व दर्शन
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<?=BAR81?> डेटा पत्रक पीडीएफ

BAR81 pdf
BAR 81
Electrical Characteristics at TA=25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
DC characteristics
Reverse current
VR = 20 V, TA = 25 °C
Forward voltage
IF = 100 mA
AC characteristics
Diode capacitance
VR = 1 V, f = 1 MHz
VR = 3 V, f = 1 MHz
Forward resistance
IF = 5 mA, f = 100 MHz
Series inductance chip to ground
IR
-
VF
-
CT
-
-
rf
-
Ls -
-
0.93
0.6
0.57
0.7
0.15
max.
20
1
-
-
-
-
Unit
nA
V
pF
nH
Semiconductor Group
2
Feb-26-1996

विन्यास 3 पेज
डाउनलोड[ BAR81 Datasheet.PDF ]


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