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BAR80 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon RF Switching Diode - Infineon Technologies AG

भाग संख्या BAR80
समारोह Silicon RF Switching Diode
मैन्युफैक्चरर्स Infineon Technologies AG 
लोगो Infineon Technologies AG लोगो 
पूर्व दर्शन
1 Page
		
<?=BAR80?> डेटा पत्रक पीडीएफ

BAR80 pdf
BAR80
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC characteristics
Reverse current
VR = 20 V
Forward voltage
IF = 100 mA
IR - - 20 nA
VF
0.8 -
1V
AC characteristics
Diode capacitance
VR = 1 V, f = 1 MHz
VR = 3 V, f = 1 MHz
Forward resistance
IF = 5 mA, f = 100 MHz
Series inductance chip to ground
CT pF
- 1 1.6
0.6 0.92 1.3
rf - 0.5 0.7
Ls - 0.14 - nH
Application information
Shunt signal isolation
IF = 10 mA, f = 2 GHz, RG=RL=50
Shunt insertion loss
VR = 5 V, f = 2 GHz, RG=RL=50
SI - 23 - dB
IL - 0.15 -
Configuration of the shunt-diode
- A perfect ground is essential for optimum isolation
- The anode pins should be used as passage for RF
2 Aug-17-2001

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डाउनलोड[ BAR80 Datasheet.PDF ]


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अनुशंसा डेटापत्रक

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BAR80Silicon RF Switching Diode (Design for use in shunt configuration Hight shunt signal isolation Low shunt insertion loss)Siemens Semiconductor Group
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BAR80Silicon RF Switching DiodeInfineon Technologies AG
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