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BAR80 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon RF Switching Diode (Design for use in shunt configuration Hight shunt signal isolation Low shunt insertion loss) - Siemens Semiconductor Group

भाग संख्या BAR80
समारोह Silicon RF Switching Diode (Design for use in shunt configuration Hight shunt signal isolation Low shunt insertion loss)
मैन्युफैक्चरर्स Siemens Semiconductor Group 
लोगो Siemens Semiconductor Group लोगो 
पूर्व दर्शन
1 Page
		
<?=BAR80?> डेटा पत्रक पीडीएफ

BAR80 pdf
Electrical characteristics
at TA = 25 °C, unless otherwise specified.
Parameter
Reverse current
VR = 20 V
Forward voltage
IF = 100 mA
Diode capacitance
VR = 1 V,f = 1 MHz
VR = 3 V,f = 1 MHz
Forward resistance
f = 100MHz
IF = 5 mA
Series inductance to ground
Application information
Shunt signal isolation
IF = 10 mA, f = 2 GHz, RG = RL = 50
Shunt insertion loss
VR = 5 V, f = 2 GHz, RG = RL = 50
BAR 80
Symbol
IR
VF
CT
rf
Ls
min.
-
-
-
0.6
-
-
Value
typ. max.
- 20
0.92 1
1 1.6
0.92 1.3
0.5 0.7
0.14 -
Unit
nA
V
pF
nH
- dB
- 23 -
IL dB
- 0.15 -
Configuration of the shunt-diode
-A perfect ground is essential
for optimum isolation
-The anode pins should be used
as passage for RF
Semiconductor Group
2
Edition A02, 27.02.95

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