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BAR63-03 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) - Siemens Semiconductor Group

भाग संख्या BAR63-03
समारोह Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)
मैन्युफैक्चरर्स Siemens Semiconductor Group 
लोगो Siemens Semiconductor Group लोगो 
पूर्व दर्शन
1 Page
		
<?=BAR63-03?> डेटा पत्रक पीडीएफ

BAR63-03 pdf
Electrical Characteristics
at TA = 25 °C, unless otherwise specified.
Parameter
DC Characteristics
Breakdown voltage
IR = 5 µA
Reverse leakage
VR = 20 V
Forward voltage
IF = 100 mA
Diode capacitance
VR = 0 V, f = 100 MHz
Diode capacitance
VR = 5 V, f = 1 MHz
Forward resistance
IF = 5 mA, f = 100 MHz
IF = 10 mA, f = 100 MHz
Charge carrier lifetime
IF = 10 mA, IR = 6 mA, IR = 3 mA
Series inductance
BAR 63-03W
Symbol
min.
Value
Unit
typ. max.
V(BR)
IR
VF
CT
CT
rf
τL
Ls
50 -
--
V
-
nA
50
V
- 0.95 1.2
pF
- 0.3 -
pF
- 0.21 0.3
- 1.2 2
- 1-
ns
- 75 -
nH
- 2.0 -
Semiconductor Group 2 Edition A01, 22.07.94

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