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FGH60N60SMD डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - IGBT - ON Semiconductor

भाग संख्या FGH60N60SMD
समारोह IGBT
मैन्युफैक्चरर्स ON Semiconductor 
लोगो ON Semiconductor लोगो 
पूर्व दर्शन
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FGH60N60SMD pdf
FGH60N60SMD
ABSOLUTE MAXIMUM RATINGS
Symbol
Description
Ratings
Unit
VCES
VGES
Collector to Emitter Voltage
Gate to Emitter Voltage
Transient Gate to Emitter Voltage
600 V
±20 V
±30 V
IC Collector Current
TC = 25°C
120 A
TC = 100°C
60 A
ICM (Note 1) Pulsed Collector Current
180 A
IF Diode Forward Current
TC = 25°C
60 A
TC = 100°C
30 A
IFM (Note 1) Pulsed Diode Maximum Forward Current
180 A
PD Maximum Power Dissipation
TC = 25°C
600 W
TC = 100°C
300 W
TJ Operating Junction Temperature
55 to +175
°C
TSTG
Storage Temperature Range
55 to +175
°C
TL Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds
300
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: Pulse width limited by max. junction temperature.
THERMAL CHARACTERISTICS
Symbol
Parameter
RqJC (IGBT)
RqJC (Diode)
RqJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Typ.
Max.
0.25
1.1
40
Unit
_C/W
_C/W
_C/W
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
FGH60N60SMD
Top Mark
FGH60N60SMD
Package
TO247
Packing
Method
Tube
Reel Size
N/A
Tape Width
N/A
Qty per
Tube
30
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