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BTP9050N3 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - High Voltage PNP Epitaxial Planar Transistor - CYStech

भाग संख्या BTP9050N3
समारोह High Voltage PNP Epitaxial Planar Transistor
मैन्युफैक्चरर्स CYStech 
लोगो CYStech लोगो 
पूर्व दर्शन
1 Page
		
<?=BTP9050N3?> डेटा पत्रक पीडीएफ

BTP9050N3 pdf
CYStech Electronics Corp.
Spec. No. : C619N3
Issued Date : 2012.08.21
Revised Date : 2014.08.06
Page No. : 2/8
Absolute Maximum Ratings (Ta=25C)
Parameter
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Peak Collector Current , single pulse, pulse width tp<1ms
Peak Base Current, single pulse, pulse width tp<1ms
Power Dissipation
Operating Junction and Storage Temperature Range
VCBO
VCEO
VEBO
IC
ICM
IBM
PD
Tj ; Tstg
Note : Device mounted on a FR-4 PCB, single sided copper, tin plated and standard footprint.
Limits
-500
-500
-5
-150
-500
-200
300 (Note)
-55~+150
Unit
V
V
V
mA
mA
mA
mW
C
Thermal Characteristics
Parameter
Symbol
Thermal Resistance, Junction-to-Ambient, in free air (Note)
Rth,j-a
Thermal Resistance, Junction-to-Solder point
Rth,j-sp
Note : Device mounted on a FR-4 PCB, single sided copper, tin plated and standard footprint.
Limit
417
70
Unit
C/W
Characteristics (Ta=25C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICES
IEBO
*VCE(sat)
*VCE(sat)
*VBE(sat)
*hFE 1
*hFE 2
*hFE 3
fT
Cob
Cib
Min.
-500
-500
-5
-
-
-
-
-
-
100
80
40
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
50
12
85
Max.
-
-
-
-100
-100
-1
-0.5
-0.5
-0.9
300
300
-
-
-
-
Unit
V
V
V
nA
nA
μA
V
V
V
-
-
-
MHz
pF
pF
Test Conditions
IC=-100μA
IC=-1mA
IE=-50μA
VCB=-480V
VCE=-480V, VBE=0V
VEB=-5V
IC=-20mA, IB=-2mA
IC=-50mA, IB=-10mA
IC=-50mA, IB=-10mA
VCE=-10V, IC=-10mA
VCE=-10V, IC=-50mA
VCE=-10V, IC=-100mA
VCE=-10V, IC=-10mA, f=10MHz
VCB=-10V, IE=0A, f=1MHz
VEB=-0.5V, IC=0A, f=1MHz
*Pulse Test: Pulse Width 380μs, Duty Cycle2%
BTP9050N3
CYStek Product Specification

विन्यास 8 पेज
डाउनलोड[ BTP9050N3 Datasheet.PDF ]


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BTP9050N3High Voltage PNP Epitaxial Planar TransistorCYStech
CYStech


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