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C3D16065D1 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon Carbide Schottky Diode - CREE

भाग संख्या C3D16065D1
समारोह Silicon Carbide Schottky Diode
मैन्युफैक्चरर्स CREE 
लोगो CREE लोगो 
पूर्व दर्शन
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C3D16065D1 pdf
Electrical Characteristics
Symbol Parameter
Typ.
Max.
Unit
Test Conditions
VF Forward Voltage
IR Reverse Current
QC Total Capacitive Charge
C Total Capacitance
1.5
2.0
1.8
2.4
V
IF = 16 A TJ=25°C
IF = 16 A TJ=175°C
18
38
95
378
μA
VR = 650 V TJ=25°C
VR = 650 V TJ=175°C
40
nC
VR = 400 V, IF = 16 A
TJ = 25°C
740 VR = 0 V, TJ = 25°C, f = 1 MHz
74 pF VR = 200 V, TJ = 25˚C, f = 1 MHz
68 VR = 400 V, TJ = 25˚C, f = 1 MHz
EC Capacitance Stored Energy
6
μJ VR = 400 V
Note:This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol
Parameter
RθJC Thermal Resistance from Junction to Case
Typ.
0.86
Unit
°C/W
Note
Fig. 9
Note
Fig. 1
Fig. 2
Fig. 5
Fig. 6
Fig. 7
Typical Performance
45
40 TJ = -55°C
TJ = 25°C
35 TJ = 75°C
30
TJ = 125°C
TJ = 175°C
25
20
15
10
5
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
FowardVVVFoF(ltV(aV)g)e, VF (V)
Figure 1. Forward Characteristics
2 C3D16065D1 Rev. -, 08-2019
400
350
300
250
200
150
100
50
0
0
TJ = 175 °C
TJ = 125 °C
TJ = 75 °C
TJ = 25 °C
TJ = -55 °C
200 400 600 800 1000 1200
ReverseVVRol(tVag)e, VR (V)
Figure 2. Reverse Characteristics

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डाउनलोड[ C3D16065D1 Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
C3D16065DSilicon Carbide Schottky DiodeCREE
CREE
C3D16065D1Silicon Carbide Schottky DiodeCREE
CREE


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