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WSF50N10 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel MOSFET - Winsok

भाग संख्या WSF50N10
समारोह N-Channel MOSFET
मैन्युफैक्चरर्स Winsok 
लोगो Winsok लोगो 
पूर्व दर्शन
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<?=WSF50N10?> डेटा पत्रक पीडीएफ

WSF50N10 pdf
Electrical Characteristics (TJ=25 , unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th)
VGS(th)
Gate Threshold Voltage
VGS(th) Temperature Coefficient
IDSS Drain-Source Leakage Current
IGSS
gfs
Rg
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge (10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
VGS=0V , ID=250uA
Reference to 25, ID=1mA
VGS=10V , ID=20A
VGS=4.5V , ID=15A
VGS=VDS , ID =250uA
VDS=80V , VGS=0V , TJ=25
VDS=80V , VGS=0V , TJ=55
VGS=±20V , VDS=0V
VDS=5V , ID=20A
VDS=0V , VGS=0V , f=1MHz
VDS=30V , VGS=10V , ID=20A
VDD=30V , VGS=10V,ID=20A
VDS=30V , VGS=0V , f=1MHz
WSF50N10
N-Ch MOSFET
Min.
100
---
---
---
1.0
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
Typ.
---
0.098
22
24
2.0
-5.52
---
---
---
25.7
1.0
50
8
10
18
9
56
14
2450
150
85
Max.
---
---
28
32
3.0
---
10
100
±100
---
1.2
65
14
18
33
17
101
26
3180
192
115
Unit
V
V/
mΩ
V
mV/
uA
nA
S
Ω
nC
ns
pF
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy5
Conditions
VDD=25V , L=0.1mH , IAS=18A
Min.
80
Typ.
---
Max.
---
Unit
mJ
Diode Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current1,6
Pulsed Source Current2,6
Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=20A , TJ=25
IF=20A , dI/dt=100A/µs , TJ=25
Min.
---
---
---
---
---
Typ.
---
---
---
40
83
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t<10sec.
2.The data tested by pulsed , pulse width 300us , duty cycle 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=18A
4.The power dissipation is limited by 150junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Max.
20
45
1.3
---
---
Unit
A
A
V
nS
nC
www.winsok.tw
Page 2
Dec.2014

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डाउनलोड[ WSF50N10 Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
WSF50N10N-Channel MOSFETWinsok
Winsok


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