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IRFP27N60K डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - Vishay

भाग संख्या IRFP27N60K
समारोह Power MOSFET
मैन्युफैक्चरर्स Vishay 
लोगो Vishay लोगो 
पूर्व दर्शन
1 Page
		
<?=IRFP27N60K?> डेटा पत्रक पीडीएफ

IRFP27N60K pdf
IRFP27N60K, SiHFP27N60K
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
RthJA
RthCS
Maximum Junction-to-Case (Drain)
RthJC
TYP.
-
0.24
-
MAX.
40
-
0.29
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 30 V
VDS = 600 V, VGS = 0 V
VDS = 480 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 16 Ab
VDS = 50 V, ID = 16 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Ciss
Coss
Crss
Coss
Coss eff.
VGS = 0 V
VDS = 25 V
f = 1.0 MHz, see fig. 5
VGS = 0 V
VDS = 1.0 V , f = 1.0 MHz
VGS = 0 V
VDS = 480 V , f = 1.0 MHz
VGS = 0 V
VDS = 0 V to 480 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
ID = 27 A, VDS = 480 V
Qgs
VGS = 10 V
see fig. 6 and 13b
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
td(on)
tr
td(off)
tf
VDD = 300 V, ID = 27 A
Rg = 4.3 , VGS = 10 V, see fig. 10b
MIN.
600
-
3.0
-
-
-
-
14
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
- -V
640 - mV/°C
- 5.0 V
- ± 100 nA
- 50
μA
- 250
0.18 0.22
- -S
4660
460
41
5490
120
250
-
-
-
27
110
43
38
-
-
-
-
-
-
180
56
86
-
-
-
-
pF
nC
ns
Continuous Source-Drain Diode Current IS MOSFET symbol
showing the
Pulsed Diode Forward Currenta
integral reverse
ISM p - n junction diode
D
G
S
- - 27
A
- - 110
Body Diode Voltage
VSD
TJ = 25 °C, IS = 27 A, VGS = 0 Vb
- - 1.5 V
Body Diode Reverse Recovery Time
trr
- 620 920 ns
Body Diode Reverse Recovery Charge
Qrr
TJ = 25 °C, IF = 27 A, dI/dt = 100 A/μsb
-
11 16 μC
Reverse Recovery Current
IRRM
- 36 53 A
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80% VDS.
www.vishay.com
2
Document Number: 91219
S11-0487-Rev. C, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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